On-resistance and Breakdown in Resurf-devices
نویسندگان
چکیده
One key issue for high voltage CMOS structures is the proper design of the output driver devices, which are usually lateral DMOS transistors (LDMOST). We present an analysis of a LDMOST and an ALDMOST (accumulation LDMOST) with respect to ON-resistance, punch-through and avalanche breakdown.
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تاریخ انتشار 2014